Deep levels in the MBE ZnO:As/n-GaN diodes – Photoluminescence, electrical properties and deep level transient spectroscopy

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机构：
[1] Zielony, E.
[2] Przezdziecka, E.
[3] Placzek-Popko, E.
[4] Lisowski, W.
[5] Stachowicz, M.
[6] Paradowska, K.M.
[7] Jakiela, R.
[8] Kozanecki, A.
来源：
Zielony, E. (eunika.zielony@pwr.edu.pl) | 1600年 / Elsevier Ltd卷 / 742期
关键词：
The research was partially supported by the statutory grant of Wroclaw University of Science and Technology; 0401/0009/17; by the NCN project DEC-2013/09/D/ST3/03750 and by the Polish National Centre for Research and Development (NCBiR) through the project PBS2/A5/34/2013. Author K.M.P would like to acknowledge the financial support in the form of scholarship from the special-purpose grant awarded to the Faculty of Fundamental Problems of Technology by Ministry of Science and Higher Education in 2017 for scientific research or development and related tasks; for young scientists and Ph.D students;
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