Conductance Deep-Level Transient Spectroscopy and Current Transport Mechanisms in Au|Pt|n-GaN Schottky Barrier Diodes

被引：5

作者：

Gassoumi, M. ^{[1
,2
]}

机构：

[1] Univ Kairouan, Inst Super Sci Appl & Technol Kasserine, Unite Rech Mat Avances Nanotechnol, BP 471, Kasserine, Tunisia

[2] Qassim Univ, Coll Sci, Dept Phys, Buryadh, Saudi Arabia

来源：

PHYSICS OF THE SOLID STATE | 2020年 / 62卷 / 04期

关键词：

Schottky barrier diodes; I(V) characteristics; HEMT; AlGaN; GaN; interface state density; barrier height inhomogeneity; traps; CDLTS; MOLECULAR-BEAM EPITAXY; TEMPERATURE-DEPENDENCE; PARAMETERS; LEAKAGE; HEIGHT;

D O I：

10.1134/S1063783420040095

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The current transport mechanisms in Au|Pt|n-GaN Schottky barrier diodes are investigated in a temperature range of 40-325 K. The calculated barrier height and ideality factor are 1.12 and 2.13 eV, respectively, and it is observed that the barrier height phi(b) increases and the ideality factor n decreases with temperature increase. The apparent barrier height and the ideality factor derived by using thermionic emission theory are found to be strongly temperature-dependent. The increase in barrier height with increasing temperature has been explained as an effect of barrier inhomogeneity. This behavior has been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneity at the interface between the metal and semiconductor. The abnormal behavior of all these parameters can be attributed to the presence of deep levels thermally activated. Conductance deep-level transient spectroscopy (CDLTS) results shows that the two deep-level defects are observed in as-grown sample with activation energies of E-1 = 0.18 eV and HL1 = 0.87 eV.

引用

页码：636 / 641

页数：6

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