Redundancy Improves Yield of Semiconductor Memories.

被引：0

作者：

Heinrich, Peter

机构：

来源：

Elektronik Munchen | 1981年 / 30卷 / 20期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

DATA STORAGE, SEMICONDUCTOR

引用

页码：79 / 86

共 50 条

[1] SEMICONDUCTOR MEMORIES.
Wilcock, J.D.
New Electronics, 1983, 16 (16): : 41 - 44
[2] SEMICONDUCTOR MEMORIES.
Wilcock, J.D.
New Electronics, 1980, 13 (04): : 106 - 108
[3] SEMICONDUCTOR MEMORIES.
WILCOCK, F.D.
1982, V 15 (N 16): : 38 - 41
[4] SEMICONDUCTOR MEMORIES.
Wilcock, J.D.
New Electronics, 1984, 17 (16): : 65 - 68
[5] SELECTION AND APPLICATION OF SEMICONDUCTOR MEMORIES.
Davis, Sidney
Computer Design, 1974, 13 (01): : 65 - 77
[6] ERASABLE/PROGRAMMABLE SEMICONDUCTOR MEMORIES.
Twaddell, William
EDN, 1983, 28 (06) : 147 - 160
[7] Technology of Microprocessors and Semiconductor Memories.
Krusius, Peter
Sahko, 1979, 52 (04): : 111 - 115
[8] LATE ADDRESS CONCEPT FOR SEMICONDUCTOR MEMORIES.
Anon
IBM technical disclosure bulletin, 1985, 27 (12): : 7098 - 7099
[9] REDUCTION OF LATENCY IN SERIAL SEMICONDUCTOR MEMORIES.
Hicks, B.W.
Andrews, C.J.
Australian Computer Journal, 1976, 8 (02): : 47 - 50
[10] BATTERY BACKUP FOR MINICOMPUTER SEMICONDUCTOR MEMORIES.
Washburn, Jerry
Computer Design, 1977, 16 (04):