SEMICONDUCTOR MEMORIES.

被引：0

作者：

WILCOCK, F.D.

机构：

来源：

| 1982年 / V 15卷 / N 16期

关键词：

DATA STORAGE; DIGITAL - RANDOM ACCESS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

THE PAPER PRESENTS PERFORMANCE DETAILS OF 64K R. A. M. S AND 256 K DYNAMIC R. A. M. S, SURVEYS ELECTRICALLY ERASABLE R.O. M. S, FAST MEMORIES, 16 K STATIC R. A. M. S.

引用

页码：38 / 41

共 50 条

[1] SEMICONDUCTOR MEMORIES.
Wilcock, J.D.
New Electronics, 1983, 16 (16): : 41 - 44
[2] SEMICONDUCTOR MEMORIES.
Wilcock, J.D.
New Electronics, 1980, 13 (04): : 106 - 108
[3] SEMICONDUCTOR MEMORIES.
Wilcock, J.D.
New Electronics, 1984, 17 (16): : 65 - 68
[4] SELECTION AND APPLICATION OF SEMICONDUCTOR MEMORIES.
Davis, Sidney
Computer Design, 1974, 13 (01): : 65 - 77
[5] ERASABLE/PROGRAMMABLE SEMICONDUCTOR MEMORIES.
Twaddell, William
EDN, 1983, 28 (06) : 147 - 160
[6] Technology of Microprocessors and Semiconductor Memories.
Krusius, Peter
Sahko, 1979, 52 (04): : 111 - 115
[7] LATE ADDRESS CONCEPT FOR SEMICONDUCTOR MEMORIES.
Anon
IBM technical disclosure bulletin, 1985, 27 (12): : 7098 - 7099
[8] REDUCTION OF LATENCY IN SERIAL SEMICONDUCTOR MEMORIES.
Hicks, B.W.
Andrews, C.J.
Australian Computer Journal, 1976, 8 (02): : 47 - 50
[9] BATTERY BACKUP FOR MINICOMPUTER SEMICONDUCTOR MEMORIES.
Washburn, Jerry
Computer Design, 1977, 16 (04):
[10] Redundancy Improves Yield of Semiconductor Memories.
Heinrich, Peter
Elektronik Munchen, 1981, 30 (20): : 79 - 86

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