EMPIRICAL TIGHT-BINDING BAND STRUCTURE OF WURTZITE SEMICONDUCTORS SiC, ZnSe, AND ZnTe.

被引：0

作者：

Tuncay, C. ^{[1
]}

Tomak, M. ^{[1
]}

机构：

[1] Middle East Technical Univ, Dep of, Physics, Ankara, Turk, Middle East Technical Univ, Dep of Physics, Ankara, Turk

来源：

Physica Status Solidi (B) Basic Research | 1985年 / 127卷 / 02期

关键词：

D O I：

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学科分类号：

摘要：

SILICON CARBIDE

引用

页码：543 / 547

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