EMPIRICAL TIGHT-BINDING BAND STRUCTURE OF WURTZITE SEMICONDUCTORS SiC, ZnSe, AND ZnTe.

被引：0
|
作者：
Tuncay, C. [1 ]
Tomak, M. [1 ]
机构：
[1] Middle East Technical Univ, Dep of, Physics, Ankara, Turk, Middle East Technical Univ, Dep of Physics, Ankara, Turk
来源：
Physica Status Solidi (B) Basic Research | 1985年 / 127卷 / 02期
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摘要：
SILICON CARBIDE
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页码：543 / 547
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