Comparison between the interface properties of N2O-nitrided and N2O-grown oxides

被引：0
|
作者：
Huazhong Univ of Science and, Technology, Wuhan, China [1 ]
机构：
来源：
Solid State Electron | / 11卷 / 2053-2056期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] ENHANCED OFF-STATE LEAKAGE CURRENTS IN N-CHANNEL MOSFETS WITH N2O-GROWN GATE DIELECTRIC
    XU, Z
    LAI, PT
    NG, WT
    IEEE ELECTRON DEVICE LETTERS, 1995, 16 (10) : 436 - 438
  • [42] Effect of starting oxide preparation on electrical properties of reoxidized nitrided and N2O-annealed gate oxides
    Wu, You-Lin
    Hwu, Jenn-Gwo
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1994, 33 (9 A): : 5101 - 5106
  • [43] Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices
    Curro, Giuseppe
    Camalleri, Marco
    Cali, Denise
    Monforte, Francesca
    Neri, Fortunato
    MICROELECTRONICS RELIABILITY, 2007, 47 (4-5) : 798 - 801
  • [44] CLINICAL COMPARISON BETWEEN SEVOFLURANE-N2O AND ENFLURANE-N2O ANESTHESIA
    BLANCO, E
    BLANCO, J
    VIDAL, MI
    ALVAREZ, J
    BRITISH JOURNAL OF ANAESTHESIA, 1995, 74 : 94 - 94
  • [45] Properties of the oxides of nitrogen Part I The binary system N2O4-N2O5
    Lowry, TM
    Lemon, JT
    JOURNAL OF THE CHEMICAL SOCIETY, 1935, : 692 - 696
  • [46] Electrical properties of oxides grown on strained Si using microwave N2O plasma
    Bera, LK
    Ray, SK
    Nayak, DK
    Usami, N
    Shiraki, Y
    Maiti, CK
    APPLIED PHYSICS LETTERS, 1997, 70 (01) : 66 - 68
  • [47] Precise control of nitrogen profiles and nitrogen bond states for highly reliable N2O-grown oxynitride
    Teramoto, A
    Umeda, H
    Tamura, H
    Nishida, Y
    Sayama, H
    Terada, K
    Kawase, K
    Ohno, Y
    Shigetomi, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (05) : 1888 - 1892
  • [48] INTERACTIONS BETWEEN OXYGEN AND NITROGEN - O-N, O-N2, AND O2-N2
    VANDERSLICE, JT
    MASON, EA
    MAISCH, WG
    JOURNAL OF CHEMICAL PHYSICS, 1959, 31 (03): : 738 - 746
  • [49] EFFECT OF STARTING OXIDE PREPARATION ON ELECTRICAL-PROPERTIES OF REOXIDIZED NITRIDED AND N2O-ANNEALED GATE OXIDES
    WU, YL
    HWU, JG
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9A): : 5101 - 5106
  • [50] Interfacial properties of SiO2 grown on 4H-SiC:: comparison between N2O and wet O2 oxidation ambient
    Poggi, Antonella
    Moscatelli, Francesco
    Scorzoni, Andrea
    Marino, Giovanni
    Nipoti, Roberta
    Sanmartin, Michele
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 979 - 982
12345