Carrier trapping in thin N2O-grown oxynitride/oxide di-layer for PowerMOSFET devices

被引：2
|
作者：
Curro, Giuseppe
Camalleri, Marco
Cali, Denise
Monforte, Francesca
Neri, Fortunato
机构：
[1] STMicroelect, I-95121 Catania, Italy
[2] Univ Messina, Dipartimento Fis Mat & Tecnol Fis Avanzate, I-98166 Messina, Italy
来源：
MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 4-5期
关键词：
D O I：
10.1016/j.microrel.2007.01.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed study of the carrier trapping properties shown by the silicon/oxynitride/oxide gate layers in PowerVDMOS technologies is reported. A quantitative analysis of hole and electron trap densities versus the specific N2O based nitridation process, extracted from Fowler-Nordheim constant current stress kinetics, allows a deep understanding of the role played by those defects in the susceptibility of every nitrided layer. (C) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码：798 / 801
页数：4
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