Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

被引：0
|
作者：
Ni, W.-X.
Joelsson, K.B.
Du, C.-X.
Buyanova, I.A.
Pozina, G.
Chen, W.M.
Hansson, G.V.
Monemar, B.
Cardenas, J.
Svensson, B.G.
机构：
来源：
Applied Physics Letters | 1997年 / 70卷 / 25期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Sensitization effect of Yb doping on Er-related 1.54 μm emissions in nanocrystalline Si thin films
    Zhao, X.
    Harako, S.
    Yokoyama, S.
    Ide, K.
    Komuro, S.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 159 - +
  • [32] 0.85 AND 1.54 MU-M EMISSIONS OF CAF2ER3+ LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    DARAN, E
    LEGROS, R
    MUNOSYAGUE, A
    FONTAINE, C
    BAUSA, LE
    JOURNAL DE PHYSIQUE IV, 1994, 4 (C4): : 397 - 401
  • [33] Ge segregation during molecular beam epitaxial growth of Si1-xGex/Si layers
    Gravesteijn, D.J., 1600, (183):
  • [34] Study on crystalline properties of Er-Si-O compounds in relation to Er-related 1.54 μm photoluminescence and electrical properties
    Kimura, Tadamasa
    Masaki, Katsuaki
    Isshiki, Hideo
    JOURNAL OF LUMINESCENCE, 2006, 121 (02) : 226 - 229
  • [35] Auger de-excitation of the 1.54 μm emission of Er- and O-implanted silicon
    Nakanose, T
    Kimura, T
    Isshiki, H
    Yugo, S
    Saito, R
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 161 : 1080 - 1084
  • [36] Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy
    Du, Chun-Xia
    Ni, Wei-Xin
    Joelsson, Kenneth B.
    Hansson, Goran V.
    Applied Physics Letters, 1997, 71 (08):
  • [37] Epitaxial growth of Er2O3 films on Si(001)
    Xu, R
    Zhu, YY
    Chen, S
    Xue, F
    Fan, YL
    Yang, XJ
    Jiang, ZM
    JOURNAL OF CRYSTAL GROWTH, 2005, 277 (1-4) : 496 - 501
  • [38] Enhancement of 1.54 μm emission in Ce3+-Er 3+ codoped Ca4Si2O7F2 phosphor
    Talewar, Rupesh A.
    Mahamuda, Sk
    Vyas, Arpita
    Rao, A. S.
    Moharil, S., V
    JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 775 : 810 - 817
  • [39] Electrical properties of Si:Er/Si layers grown by sublimation molecular-beam epitaxy
    O. V. Belova
    V. N. Shabanov
    A. P. Kasatkin
    O. A. Kuznetsov
    A. N. Yablonskiĭ
    M. V. Kuznetsov
    V. P. Kuznetsov
    A. V. Kornaukhov
    B. A. Andreev
    Z. F. Krasil’nik
    Semiconductors, 2008, 42 : 137 - 141
  • [40] Molecular beam epitaxial growth of ZnSe layers on GaAs and Si substrates
    López-López, M
    Méndez-García, VH
    Meléndez-Lira, M
    Luyo-Alvarado, J
    Tamura, M
    Momose, K
    Yonezu, H
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2000, 220 (01): : 99 - 109
12345