Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission

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Ni, W.-X.
Joelsson, K.B.
Du, C.-X.
Buyanova, I.A.
Pozina, G.
Chen, W.M.
Hansson, G.V.
Monemar, B.
Cardenas, J.
Svensson, B.G.
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Applied Physics Letters | 1997年 / 70卷 / 25期
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