Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

被引：0
|
作者：
Giles, L.F. [1 ]
Omri, M. [1 ]
de Mauduit, B. [1 ]
Claverie, A. [1 ]
Skarlatos, D. [1 ]
Tsoukalas, D. [1 ]
Nejim, A. [1 ]
机构：
[1] CEMES/CNRS, Toulouse, France
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1999年 / 148卷 / 1-4期
关键词：
This work was part of the Rapid Project and was funded as ESPRIT 23481;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
10
引用
收藏
页码：273 / 278
相关论文
共 50 条
  • [21] A SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON
    JONES, KS
    PRUSSIN, S
    WEBER, ER
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (01): : 1 - 34
  • [22] Characterization of lattice defects in ion-implanted silicon
    Servidori, M
    Cembali, F
    Milita, S
    X-RAY AND NEUTRON DYNAMICAL DIFFRACTION: THEORY AND APPLICATIONS, 1996, 357 : 301 - 321
  • [23] Investigation of defects in reactive ion-implanted silicon
    Bhatt, G
    Yadav, AD
    Dubey, SK
    Rao, TKG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 222 (1-2): : 75 - 80
  • [24] INTERSTITIAL TYPE DEFECTS IN ION-IMPLANTED SILICON
    BEREZHNOV, NI
    STELMAKH, VF
    CHELYADINSKII, AR
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (02): : K121 - K125
  • [25] Size distribution of end-of-range dislocation loops in silicon-implanted silicon
    Pan, GZ
    Tu, KN
    Prussin, S
    APPLIED PHYSICS LETTERS, 1996, 68 (12) : 1654 - 1656
  • [26] ANNEALING KINETICS OF DEFECTS OF ION-IMPLANTED AND FURNACE-ANNEALED SILICON LAYERS - THERMODYNAMIC APPROACH
    CHRISTOFIDES, C
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (11) : 1283 - 1294
  • [27] CHARACTERIZATION OF ION-IMPLANTED SILICON ANNEALED WITH A GRAPHITE RADIATION SOURCE
    WILSON, SR
    GREGORY, RB
    PAULSON, WM
    DIEHL, HT
    HAMDI, AH
    MCDANIEL, FD
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) : 1734 - 1737
  • [28] THE AMORPHIZATION AND SUBSEQUENT RECOVERY OF INSITU ANNEALED ION-IMPLANTED SILICON
    CLAEYS, C
    BENDER, H
    CEROFOLINI, G
    MEDA, L
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C122 - C122
  • [29] Raman spectroscopic study of ion-implanted and annealed silicon.
    Tuschel, DD
    Lavine, JP
    Russell, JB
    DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 : 549 - 554
  • [30] ELECTRICAL CHARACTERISTICS OF ION-IMPLANTED LASER-ANNEALED SILICON
    YOUNG, RT
    NARAYAN, J
    WHITE, CW
    WOOD, RF
    CLELAND, JW
    WESTBROOK, RD
    MOONEY, PM
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 41 - 44
12345