Spatial distribution of vacancy defects in GaAs:Te wafers studied by positron annihilation

被引：0
|
作者：
Cavallini, A. [1 ]
Dupasquier, A. [1 ]
Ferro, G. [1 ]
Piqueras, J. [1 ]
Valli, M. [1 ]
机构：
[1] Istituto Nazionale di Fisica della, Materia, Italy
来源：
Materials Science Forum | 1997年 / 255-257卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：614 / 616
相关论文
共 50 条
  • [41] Atomic defects in hexagonal tungsten carbide studied by positron annihilation
    Rempel, AA
    Würschum, R
    Schaefer, HE
    PHYSICAL REVIEW B, 2000, 61 (09): : 5945 - 5948
  • [42] POSITRON-ANNIHILATION SPECTROSCOPY OF VACANCY-RELATED DEFECTS IN SEMICONDUCTORS
    CORBEL, C
    SAARINEN, K
    HAUTOJARVI, P
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1992, 25 (04): : 241 - 256
  • [43] The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy
    庞锦标
    李辉
    周凯
    王柱
    Plasma Science and Technology, 2012, (07) : 650 - 655
  • [44] The Correlation Between Dislocations and Vacancy Defects Using Positron Annihilation Spectroscopy
    Pang Jinbiao
    Li Hui
    Zhou Kai
    Wang Zhu
    PLASMA SCIENCE & TECHNOLOGY, 2012, 14 (07) : 650 - 655
  • [45] Positron annihilation study of defects in GaAs irradiated by fission neutron
    Zhu, Shengyun
    Li, Anli
    Luo, Qi
    Fan, Zhiguo
    Zheng, Shengnan
    Gou, Zhenhui
    Qian, Jiayu
    Nuclear Science and Techniques/Hewuli, 1997, 8 (01): : 30 - 32
  • [46] Positron annihilation study of defects in GaAs irradiated by fission neutron
    Zhu Sheng Yun
    Nuclear Science and Techniques, 1997, (01) : 30 - 32
  • [47] Positron annihilation study of defects in fission neutron irradiated GaAs
    Li, Anli
    Luo, Qi
    Fan, Zhiguo
    Zheng, Shengnan
    Gou, Zhenhui
    Wang, Chunrui
    Qian,Jiayu
    Zhu, Shengyun
    He Jishu/Nuclear Techniques, 21 (02): : 102 - 104
  • [48] Vacancy-Type Defects and Their Evolution under Mn Substitution in Single Crystalline ZnO Nanocones Studied by Positron Annihilation
    Ghoshal, Tandra
    Kar, Soumitra
    Biswas, Subhajit
    De, S. K.
    Nambissan, P. M. G.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (09): : 3419 - 3425
  • [49] Vacancy-Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion-Implanted GaN Studied by Positron Annihilation
    Uedono, Akira
    Tanaka, Ryo
    Takashima, Shinya
    Ueno, Katsunori
    Edo, Masaharu
    Shima, Kohei
    Chichibu, Shigefusa F.
    Uzuhashi, Jun
    Ohkubo, Tadakatsu
    Ishibashi, Shoji
    Sierakowski, Kacper
    Bockowski, Michal
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2024, 261 (05):
  • [50] INFLUENCE OF DEFECTS ON DIFFUSION LENGTH INHOMOGENEITY IN GAAS-TE WAFERS
    CASTALDINI, A
    CAVALLINI, A
    FRABONI, B
    MENDEZ, B
    PIQUERAS, J
    DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS AND DEVICES, 1994, (135): : 207 - 210
12345