Spatial distribution of vacancy defects in GaAs:Te wafers studied by positron annihilation

被引：0
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作者：
Cavallini, A. [1 ]
Dupasquier, A. [1 ]
Ferro, G. [1 ]
Piqueras, J. [1 ]
Valli, M. [1 ]
机构：
[1] Istituto Nazionale di Fisica della, Materia, Italy
来源：
Materials Science Forum | 1997年 / 255-257卷
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页码：614 / 616
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