Low resistance AL2 O3 magnetic tunnel junctions optimized through in situ conductance measurements

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作者：
Wolfman, J. [1 ,2 ]
Mauri, D. [1 ]
Lin, T. [1 ]
Yang, J. [1 ]
Chen, T. [1 ]
机构：
[1] Hitachi Global Storage Technologies, 5600 Cottle Road, San Jose, CA 95193, United States
[2] Universit´ Fraņois Rabelais, Laboratoire LEMA, Facult´ des Sciences et Techniques, 37200 Tours, France
来源：
Journal of Applied Physics | 2005年 / 97卷 / 12期
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