ORIGIN OF DARK SPOT DEFECTS IN InP/InGaAsP AGED LIGHT EMITTING DIODES.

被引：13
|
作者：
Mahajan, S. [1 ]
Chin, A.K. [1 ]
Zipfel, C.L. [1 ]
Brasen, D. [1 ]
Chin, B.H. [1 ]
Tung, R.T. [1 ]
Nakahara, S. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
Materials Letters | 1984年 / 2卷 / 03期
关键词：
ELECTROLUMINESCENCE; -; INTERMETALLICS; MICROSCOPES; ELECTRON - Applications - SEMICONDUCTOR MATERIALS - Defects;
D O I：
10.1016/0167-577X(84)90020-X
中图分类号：
学科分类号：
摘要：
The formation of dark spot defects (DSDs) in InP/InGaAsP aged light emitting diodes has been investigated by spatially resolved cathodoluminescence, transmission electron microscopy and Rutherford backscattering. It is shown that DSDs are caused by the migration of Au from the p-contact. This migration occurs during device processing and aging. As a consequence, Au-In intermetallics and inclusions associated with glide dislocations and multiple faults form, respectively, within the contact and p-InP confining layers. These features are responsible for dark spot contrast observed in electroluminescent images.
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页码：184 / 188
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