ORIGIN OF DARK SPOT DEFECTS IN InP/InGaAsP AGED LIGHT EMITTING DIODES.

被引：13
|
作者：
Mahajan, S. [1 ]
Chin, A.K. [1 ]
Zipfel, C.L. [1 ]
Brasen, D. [1 ]
Chin, B.H. [1 ]
Tung, R.T. [1 ]
Nakahara, S. [1 ]
机构：
[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
来源：
Materials Letters | 1984年 / 2卷 / 03期
关键词：
ELECTROLUMINESCENCE; -; INTERMETALLICS; MICROSCOPES; ELECTRON - Applications - SEMICONDUCTOR MATERIALS - Defects;
D O I：
10.1016/0167-577X(84)90020-X
中图分类号：
学科分类号：
摘要：
The formation of dark spot defects (DSDs) in InP/InGaAsP aged light emitting diodes has been investigated by spatially resolved cathodoluminescence, transmission electron microscopy and Rutherford backscattering. It is shown that DSDs are caused by the migration of Au from the p-contact. This migration occurs during device processing and aging. As a consequence, Au-In intermetallics and inclusions associated with glide dislocations and multiple faults form, respectively, within the contact and p-InP confining layers. These features are responsible for dark spot contrast observed in electroluminescent images.
引用
收藏
页码：184 / 188
相关论文
共 50 条
  • [41] Spectral characteristics of InGaAsP/InP infrared emitting diodes grown by LPE
    Rakovics, V
    Püspöki, S
    Balázs, J
    Réti, I
    Frigeri, C
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 491 - 494
  • [42] Structure/property relationships in polymers for light-emitting diodes.
    Galvin, ME
    Dong, H
    Menon, A
    Niazimbetova, Z
    Vaidyanathan, S
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U445 - U445
  • [43] Design and synthesis of electroactive polymers for organic light emitting diodes.
    Deng, L
    Furuta, P
    Garon, S
    Thompson, ME
    Frechet, JMJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2004, 228 : U501 - U501
  • [44] Fluorene-based polymers for light-emitting diodes.
    Wu, WS
    Bernius, M
    Dibbs, M
    Inbasekaran, M
    Woo, E
    Wujkowski, L
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2000, 219 : U455 - U455
  • [45] MODULAR FLAT PANEL DISPLAYS USING LIGHT EMITTING DIODES.
    Harris, Ronald L.
    1978, : 20 - 22
  • [46] ION-BEAM ETCHING OF INP AND ITS APPLICATION TO THE FABRICATION OF HIGH RADIANCE INGAASP/INP LIGHT-EMITTING-DIODES
    WADA, O
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2373 - 2380
  • [47] Single molecule spectroscopy of organic light-emitting diodes.
    Lee, YJ
    Park, SJ
    Gesquiere, AJ
    Barbara, PF
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2005, 229 : U790 - U790
  • [48] Cyclometalated complexes as electronic materials for organic light emitting diodes.
    Djurovich, PI
    Adamovich, V
    Ren, XF
    Li, J
    Tamayo, A
    Brooks, J
    Alleyne, B
    Tsyba, I
    Bau, R
    Thompson, ME
    D'Andrade, B
    Forrest, SR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 224 : U58 - U58
  • [49] Appropriate economic measurement techniques for organic light emitting diodes.
    Robinson, MR
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 225 : U414 - U414
  • [50] Use of polybenzobisazoles as electron transport materials for light emitting diodes.
    Alam, MM
    Jenekhe, SA
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 223 : D40 - D40
12345