1.8 GHz class E power amplifier for wireless communications

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作者：
Univ of Toronto, Toronto, Canada [1 ]
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来源：
Electron Lett | / 20卷 / 1846-1848期
关键词：
Design - MESFET devices - Microwaves - Radio communication - Semiconducting gallium arsenide - Technology - Telecommunication;
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摘要：
The authors present a 1.8 GHz class E power amplifier for wireless communications. A fully integrated class E power amplifier module was designed, fabricated and tested. The circuit was implemented in a self-aligned-gate, depletion mode 0.8 μm GaAs MESFET process. The amplifier delivers 23 dBm of power to the 50Ω load, with a power added efficiency of 57% at a supply voltage of 2.4 V.
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