A high-efficiency class-E GaNHEMT power amplifier at 1.9 GHz

被引：43

作者：

Xu, HT ^{[1
]}

Gao, S

Heikman, S

Long, SI

Mishra, UK

York, RA

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Northumbria Univ, Sch Engn, Newcastle Upon Tyne NE1 8ST, Tyne & Wear, England

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2006年 / 16卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

class E; GaN; high efficiency; high electron mobility transistor (HEMT); high power; monolithic microwave integrated circuit (MMIC) power amplifier;

D O I：

10.1109/LMWC.2005.861355

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain bias, a power-added-efficiency (PAE) of 57% and a maximum output power of over 37 dBm was achieved, corresponding to a power density of 5.25 W/mm. At 40-V drain bias, an output power of 38.7 dBm is achieved at 50% PAE corresponding to a power density of 7.4 W/mm.

引用

页码：22 / 24

页数：3

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