A high-efficiency HBT-based Class-E power amplifier for 2 GHz

被引：0
|
作者：
Milosevic, Dusan [1 ]
van der Tang, Johan [1 ]
van Roermund, Arthur [1 ]
机构：
[1] Eindhoven Univ Technol, Mixed Signal Microelect Grp, NL-5600 MB Eindhoven, Netherlands
来源：
GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Class-E power amplifier (PA) based on a GaAs heterojunction bipolar transistor (HBT) is presented. The single-ended single-stage PA delivers 24 dBm of output power at 2 GHz, achieves a peak power added efficiency (PAE) of 68% and exhibits an excellent transducer power gain higher than 16 dB. The PAE remains high over a wide output power range. The circuit contains the standard 50-Ohm input and output match and is capable of high-efficiency power amplification of constant-envelope signals, which has been demonstrated with the GMSK signal. Both lumped- and distributed-components concepts for the practical implementation of the load network are presented and discussed.
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页码：45 / 48
页数：4
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