Switching field distribution in magnetic tunnel junctions with a synthetic antiferromagnetic free layer

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作者：
Jeong, W.C. [1 ]
Park, J.H. [1 ]
Koh, G.H. [1 ]
Jeong, G.T. [1 ]
Jeong, H.S. [1 ]
Kim, Kinam [1 ]
机构：
[1] IEEE Fellow Advanced Technology Development, Semiconductor RandD Division, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Yongin-City, Gyeonggi-Do 449-711, Korea, Republic of
来源：
Journal of Applied Physics | 2005年 / 97卷 / 10期
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