Damage to the silicon substrate by reactive ion etching detected by a slow positron beam

被引：0
|
作者：
机构：
[1] Wei, Long
[2] Tabuki, Yasushi
[3] Tanigawa, Shoichiro
来源：
Wei, Long | 1600年 / 32期
关键词：
Semiconducting silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] INTRODUCTION TO REACTIVE ION-BEAM ETCHING
    DOWNEY, DF
    BOTTOMS, WR
    HANLEY, PR
    SOLID STATE TECHNOLOGY, 1981, 24 (02) : 121 - 127
  • [42] ION-BEAM ETCHING WITH REACTIVE GASES
    BOLLINGER, LD
    SOLID STATE TECHNOLOGY, 1983, 26 (01) : 99 - 108
  • [43] A survey on the reactive ion etching of silicon in microtechnology
    Jansen, H
    Gardeniers, H
    deBoer, M
    Elwenspoek, M
    Fluitman, J
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1996, 6 (01) : 14 - 28
  • [44] SELECTIVE REACTIVE ION ETCHING OF SILICON DIOXIDE
    CHANG, JS
    SOLID STATE TECHNOLOGY, 1984, 27 (04) : 214 - 219
  • [45] REACTIVE ION ETCHING OF SILICON - TEMPERATURE EFFECTS
    SCHWARTZ, GC
    SCHAIBLE, PM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : C89 - C89
  • [46] Defects produced in silicon by reactive ion etching
    Erzgraeber, H.B.
    Richter, H.H.
    Aminpur, M.-A.
    Wolff, A.
    Blum, K.
    Diffusion and Defect Data Pt.B: Solid State Phenomena, 1997, 57-58 : 371 - 376
  • [47] Silicon surface texturing by reactive ion etching
    Dekkers, HFW
    Duerinckx, F
    Szlufcik, J
    Nijs, J
    OPTO-ELECTRONICS REVIEW, 2000, 8 (04) : 311 - 316
  • [48] Reactive ion etching of tantalum in silicon tetrachloride
    Al-mashaal, Asaad K. Edaan
    Cheung, Rebecca
    MICROELECTRONIC ENGINEERING, 2022, 259
  • [49] Reactive ion etching of silicon containing polynorbornenes
    Zhao, Q
    Kohl, PA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (04) : 1257 - 1262
  • [50] Deep reactive ion etching of silicon carbide
    Tanaka, S
    Rajanna, K
    Abe, T
    Esashi, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2173 - 2176
12345