共 50 条
- [21] Effect of the band structure of energy levels on the angular distribution of diffracted X-ray radiation for positron plane channeling in silicon Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2008, 2 : 290 - 296
- [22] Effect of the Band Structure of Energy Levels on the Angular Distribution of Diffracted X-ray Radiation for Positron Plane Channeling in Silicon JOURNAL OF SURFACE INVESTIGATION, 2008, 2 (02): : 290 - 296
- [24] CHANNELING AND BACKSCATTERING OF LOW-ENERGY IONS NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 30 - 34
- [28] VARIATIONAL-METHODS ON THE POSITRON PLANAR CHANNELING RADIATION FROM DIAMOND, SILICON AND GERMANIUM RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1986, 100 (1-2): : 19 - 29
- [29] ION CHANNELING STUDIES OF LOW-ENERGY ION-BOMBARDMENT INDUCED CRYSTAL DAMAGE IN SILICON NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3): : 313 - 318
- [30] CHANNELING LENGTH OF HIGH-ENERGY POSITRONS IN SILICON CRYSTAL RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1981, 55 (3-4): : 155 - 156