Interface reactions in ZrO2 based gate dielectric stacks

被引：0
|
作者：
Gribelyuk, M.A. [1 ]
Callegari, A. [2 ]
Gusev, E.P. [2 ]
Copel, M. [2 ]
Buchanan, D.A. [2 ]
机构：
[1] IBM Microelectronics Division, Hopewell Junction, NY 12533, United States
[2] IBM T. J. Watson Research Center, Yorktown Heights, NY, United States
来源：
Journal of Applied Physics | 2002年 / 92卷 / 03期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1232 / 1237
相关论文
共 50 条
  • [41] Aqueous solution-gel preparation of ultrathin ZrO2 films for gate dielectric application
    Hardy, A.
    Van Elshocht, S.
    Adelmann, C.
    Conard, T.
    Franquet, A.
    Douheret, O.
    Haeldermans, I.
    D'Haen, J.
    De Gendt, S.
    Caymax, M.
    Heyns, M.
    D'Olieslaeger, M.
    Van Bael, M. K.
    Mullens, J.
    THIN SOLID FILMS, 2008, 516 (23) : 8343 - 8351
  • [42] ZrO2 gate dielectric deposited by plasma-enhanced atomic layer deposition method
    Koo, J
    Kim, Y
    Jeon, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (5A): : 3043 - 3046
  • [43] High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric
    Jiang, Huaxing
    Liu, Chao
    Ng, Kar Wei
    Tang, Chak Wah
    Lau, Kei May
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (12) : 5337 - 5342
  • [44] Characteristics of ZrO2 thin films by atomic layer deposition for alternative gate dielectric applications
    Park, J
    Choi, B
    Park, N
    Shin, HJ
    Lee, JG
    Kim, J
    INTEGRATED FERROELECTRICS, 2002, 48 : 23 - 32
  • [45] Characteristics of ZrO2 thin films by atomic layer deposition for alternative gate dielectric applications
    Park, Juwhan
    Choi, Bongsik
    Park, Nohhon
    Shin, Hyun-Jung
    Lee, Jae-Gab
    Kim, Jiyoung
    Integrated Ferroelectrics, 2002, 48 : 23 - 32
  • [46] Electronic structure and dielectric properties of dielectric gate material (ZrO2)x(SiO2)1-x
    Ouyang, LZ
    Ching, WY
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 7918 - 7924
  • [47] Defect generation in ultra-thin SiO2 gate layers and SiO2/ZrO2 gate stacks and the dispersive transport model
    Houssa, A
    Afanas'ev, VV
    Stesmans, A
    Heyns, MM
    MICROELECTRONIC ENGINEERING, 2001, 59 (1-4) : 367 - 371
  • [48] Electronic structure and dielectric properties of dielectric gate material (ZrO2)x(SiO2)1-x
    Ouyang, L. (ouyangl@umkc.edu), 1600, American Institute of Physics Inc. (95):
  • [49] Impact of oxidation and reduction annealing on the electrical properties of Ge/La2O3/ZrO2 gate stacks
    Henkel, Christoph
    Hellstrom, Per-Erik
    Ostling, Mikael
    Stoeger-Pollach, Michael
    Bethge, Ole
    Bertagnolli, Emmerich
    SOLID-STATE ELECTRONICS, 2012, 74 : 7 - 12
  • [50] Direct comparison of ZrO2 and HfO2 on Ge substrate in terms of the realization of ultrathin high-κ gate stacks
    Kamata, Y. (yoshiki.kamata@toshiba.co.jp), 1600, Japan Society of Applied Physics (44):
12345