Characteristics of ZrO2 thin films by atomic layer deposition for alternative gate dielectric applications

被引：0
|
作者：
Park, J [1 ]
Choi, B [1 ]
Park, N [1 ]
Shin, HJ [1 ]
Lee, JG [1 ]
Kim, J [1 ]
机构：
[1] Kookmin Univ, Dept Mat Engn, Seoul, South Korea
来源：
INTEGRATED FERROELECTRICS | 2002年 / 48卷
关键词：
ZrO2; ALD; Zr t-butoxide; H2O; MO-ALD;
D O I：
10.1080/10584580290171432
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated material and electrical properties of ZrO2 films deposited by atomic layer deposition (ALD) using Zr t-butoxide and water (H2O). As-deposited ZrO2 films show 2.4nm of CET measured at 100kHz with frequency dispersion and high leakage current (3A/cm2) at 1V. These undesirable properties may results from metallic Zr and carbon contamination in the films. The post-deposition annealing was performed in an O-2 ambient at 500square to improve the capacitance and reduce the leakage current. ZrO2 films deposited by ALD and annealed at 500degreesC exhibit CET(Capacitance Equivalent Thickness) of 2nm without dispersion issues and leakage current less than 10(-3) A/cm(2) at 1V.
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收藏
页码：23 / 32
页数：10
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