Low-ohmic contacts by excimer laser annealing of implanted polysilicon

被引：0
|
作者：
Ren, Q.W. [1 ]
van den Berg, M.R. [1 ]
Nanver, L.K. [1 ]
Slabbekoorn, J. [1 ]
Visser, C.C.G. [1 ]
机构：
[1] Delft Univ of Technology, Delft, Netherlands
来源：
International Conference on Solid-State and Integrated Circuit Technology Proceedings | 1998年
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：102 / 105
相关论文
共 50 条
  • [31] Novel vertical polysilicon thin-film transistor with excimer-laser annealing
    Lee, MZ
    Lee, CL
    Lei, TF
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (4B): : 2123 - 2126
  • [32] OHMIC CONTACTS TO AL-IMPLANTED ZNSE
    SHIN, BK
    LOOK, DC
    PARK, YS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 450 - 451
  • [33] Polysilicon Modulator Utilizing CMOS-Compatible Local Excimer Laser Annealing Technology
    Lei, Kunhao
    Wang, Lichun
    Tang, Bo
    Wei, Maoliang
    Bao, Kangjian
    Chen, Zequn
    Ye, Yuting
    Sun, Boshu
    Jian, Jialing
    Li, Lan
    Li, Junying
    Lin, Hongtao
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 2025, 43 (02) : 684 - 689
  • [34] Influence of different gas environments on the formation of thin film polysilicon by excimer laser annealing
    Chang, W. C.
    Yarn, K. F.
    Luo, W. J.
    Chen, C. T.
    Chuang, W. C.
    Lo, C. F.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2008, 2 (11): : 697 - 700
  • [35] POLYSILICON THIN-FILM TRANSISTORS WITH UNIFORM PERFORMANCE FABRICATED BY EXCIMER LASER ANNEALING
    ASAI, I
    KATO, N
    FUSE, M
    HAMANO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1B): : 474 - 481
  • [36] Novel vertical polysilicon thin-film transistor with excimer-laser annealing
    Lee, Ming-Zhen
    Lee, Chung-Len
    Lei, Tan-Fu
    2003, Japan Society of Applied Physics (42):
  • [37] Mechanism for pillar-shaped surface morphology of polysilicon prepared by excimer laser annealing
    Shih, A
    Meng, CY
    Lee, SC
    Chern, MY
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) : 3725 - 3733
  • [38] OHMIC CONTACTS TO SI-IMPLANTED INP
    YAMAGUCHI, E
    NISHIOKA, T
    OHMACHI, Y
    SOLID-STATE ELECTRONICS, 1981, 24 (03) : 263 - 265
  • [39] MICROWAVE DEVICE FOR MEASURING THICKNESS OF FILMS OF LOW-OHMIC SUBSTRATES
    GORDIENKO, YE
    GUD, YI
    DUDKIN, YA
    ZHUKOV, GV
    NIKITSKII, VP
    STAROSTENKO, VV
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1981, 24 (03) : 813 - 816
  • [40] The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond
    Drozdov, M. N.
    Arkhipova, E. A.
    Drozdov, Yu N.
    Kraev, S. A.
    Shashkin, V., I
    Parafin, A. E.
    Lobaev, M. A.
    Vikharev, A. L.
    Gorbachev, A. M.
    Radishchev, D. B.
    Isaev, V. A.
    Bogdanov, S. A.
    TECHNICAL PHYSICS LETTERS, 2020, 46 (06) : 551 - 555
12345