Minute strain fields due to vacancy type defects in a rapidly cooled Czochralski-grown silicon crystal

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作者：
Kimura, Shigeru [1 ]
Ono, Haruhiko [1 ]
Ikarashi, Taeko [1 ]
Ishikawa, Tetsuya [1 ]
机构：
[1] NEC Corp, Ibaraki, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1993年 / 32卷 / 8 A期
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