Minute strain fields due to vacancy type defects in a rapidly cooled Czochralski-grown silicon crystal

被引：0

作者：

Kimura, Shigeru ^{[1
]}

Ono, Haruhiko ^{[1
]}

Ikarashi, Taeko ^{[1
]}

Ishikawa, Tetsuya ^{[1
]}

机构：

[1] NEC Corp, Ibaraki, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1993年 / 32卷 / 8 A期

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D O I：

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摘要：

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