Optical characterization of low-energy nitrogen-ion doped GaAs

被引:0
|
作者
Shima, Takayuki [1 ]
Makita, Yunosuke [1 ]
Kimura, Shinji [1 ]
Iida, Tsutomu [1 ]
Sanpei, Hirokazu [1 ]
Yamaguchi, Misao [1 ]
Kudo, Kazuhiro [1 ]
Tanaka, Kuniaki [1 ]
Kobayashi, Naoto [1 ]
Sandhu, Adarsh [1 ]
Hoshino, Yasushi [1 ]
机构
[1] Electrotechnical Lab, Tsukuba, Japan
关键词
D O I
暂无
中图分类号
学科分类号
摘要
15
引用
下载
收藏
页码:437 / 441
相关论文
共 50 条
  • [31] EFFECTS OF LOW-ENERGY AR+ ION-BOMBARDMENT ON GAAS
    VASEASHTA, A
    ELSHABINIRIAD, A
    BURTON, LC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (04): : 489 - 500
  • [32] Maskless deposition of Au on GaAs by low-energy focused ion beam
    Kito, Kuniyoshi
    Yanagisawa, Junichi
    Monden, Kentaro
    Nakayama, Hiromasa
    Yuba, Yoshihiko
    Gamo, Kenji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (12 B): : 6853 - 6856
  • [33] Maskless deposition of Au on GaAs by low-energy focused ion beam
    Kito, K
    Yanagisawa, J
    Monden, K
    Nakayama, H
    Yuba, Y
    Gamo, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (12B): : 6853 - 6856
  • [34] Effects of low-energy (1-1.5 kV) nitrogen-ion bombardment on sharply pointed tips: Sputtering, implantation, and metal-nitride formation
    Kim, YC
    Yu, CJ
    Seidman, DN
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) : 944 - 950
  • [36] NITROGEN-ION ENERGY-LOSS IN HAVAR, NICKEL, KAPTON, AND MYLAR FOILS
    RAISANEN, J
    RAUHALA, E
    PHYSICAL REVIEW B, 1987, 35 (03): : 1426 - 1428
  • [37] OPTICAL RADIATION FROM LOW-ENERGY ION SURFACE COLLISIONS
    TOLK, NH
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 399 - 399
  • [38] The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers
    Sobolev, N. A.
    Ber, B. Ya.
    Kazantsev, D. Yu.
    Kalyadin, A. E.
    Karabeshkin, K. V.
    Mikoushkin, V. M.
    Sakharov, V. I.
    Serenkov, I. T.
    Shek, E. I.
    Sherstnev, E. V.
    Shmidt, N. M.
    TECHNICAL PHYSICS LETTERS, 2018, 44 (07) : 574 - 576
  • [39] Characterization of delta-doped B/Si multilayers by low-energy secondary ion mass spectrometry
    Liu, R
    Wee, ATS
    Shen, DH
    Takenaka, H
    SURFACE AND INTERFACE ANALYSIS, 2004, 36 (02) : 172 - 176
  • [40] The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers
    N. A. Sobolev
    B. Ya. Ber
    D. Yu. Kazantsev
    A. E. Kalyadin
    K. V. Karabeshkin
    V. M. Mikoushkin
    V. I. Sakharov
    I. T. Serenkov
    E. I. Shek
    E. V. Sherstnev
    N. M. Shmidt
    Technical Physics Letters, 2018, 44 : 574 - 576