Application of Raman spectrometry for the characterization of complex oxide thin films grown by MOCVD

被引:0
|
作者
Güttler, B. [1 ]
Gorbenko, O.Yu. [2 ]
Novozhilov, M.A. [2 ]
Samoilenkov, S.V. [2 ]
Amelichev, V.A. [2 ]
Wahl, G. [3 ]
Zandbergen, H.W. [4 ]
机构
[1] PTB, Bundesallee 100, 38116 Braunschweig, Germany
[2] Chemistry Department, Moscow State University, 119899 Moscow, Russia
[3] IOPW, TU Braunschweig, 38108 Braunschweig, Germany
[4] National Center for HREM, TU Delft, Rotterdamseweg 137, AL Delft, Netherlands
来源
Journal De Physique. IV : JP | 1999年 / 9 pt 2卷 / 08期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:8 / 1179
相关论文
共 50 条
  • [31] Physical Characterization of Zinc Oxide Thin Films Grown by ALD
    Tapily, K.
    Stegall, D.
    Gu, D.
    Baumgart, H.
    Namkoong, G.
    Elmustafa, A. A.
    ATOMIC LAYER DEPOSITION APPLICATIONS 5, 2009, 25 (04): : 85 - 92
  • [32] Characterization of Zinc Oxide thin films grown on different substrates
    Sbarcea, Beatrice G.
    Paraschiv, Carmen
    Patroi, Delia
    Marinescu, Virgil E.
    Mitrea, Sorina A.
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2015, 71 : S517 - S517
  • [33] Raman and XPS characterization of vanadium oxide thin films with temperature
    Urena-Begara, Ferran
    Crunteanu, Aurelian
    Raskin, Jean-Pierre
    APPLIED SURFACE SCIENCE, 2017, 403 : 717 - 727
  • [34] Characterization of thin metastable vanadium oxide films by Raman spectroscopy
    Schreckenbach, JP
    Witke, K
    Butte, D
    Marx, G
    FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1999, 363 (02): : 211 - 214
  • [35] Characterization of thin metastable vanadium oxide films by Raman spectroscopy
    J. P. Schreckenbach
    Klaus Witke
    Diethard Butte
    Günter Marx
    Fresenius' Journal of Analytical Chemistry, 1999, 363 : 211 - 214
  • [36] MOCVD growth and characterization of pyrite thin films
    Berry, Nicholas
    Cheng, Ming-Hsin
    Margarella, Alexandria
    Hemminger, John
    Law, Matt
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2011, 241
  • [37] Infrared characterization of GaN films grown on sapphire by MOCVD
    Kuroda, N
    Saiki, K
    Hasanudin
    Watanabe, J
    Cho, M
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2005, 772 : 281 - 282
  • [38] In situ characterization of AlN films grown on silicon by MOCVD
    Serra, AD
    Richardson, HH
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 445 - 450
  • [39] Influence of annealing atmosphere on ZnO thin films grown by MOCVD
    Sun, Jingchang
    Yang, Tianpeng
    Du, Guotong
    Liang, Hongwei
    Bian, Jiming
    Hu, Lizhong
    APPLIED SURFACE SCIENCE, 2006, 253 (04) : 2066 - 2070
  • [40] Perovskite thin films grown by direct liquid injection MOCVD
    Andrieux, M.
    Gasqueres, C.
    Legros, C.
    Gallet, I.
    Herbst-Ghysel, M.
    Condat, M.
    Kessler, V. G.
    Seisenbaeva, G. A.
    Heintz, O.
    Poissonnet, S.
    APPLIED SURFACE SCIENCE, 2007, 253 (23) : 9091 - 9098