Physical Characterization of Zinc Oxide Thin Films Grown by ALD

被引：8

作者：

Tapily, K. ^{[1
]}

Stegall, D. ^{[2
]}

Gu, D. ^{[1
,2
]}

Baumgart, H. ^{[1
,2
]}

Namkoong, G. ^{[1
,2
]}

Elmustafa, A. A. ^{[2
]}

机构：

[1] Old Dominion Univ, Dept Elect Engn, Norfolk, VA 23529 USA

[2] Appl Res Ctr, Jefferson Natl Accelerator Facil, Jefferson, VA 23606 USA

来源：

ATOMIC LAYER DEPOSITION APPLICATIONS 5 | 2009年 / 25卷 / 04期

关键词：

ATOMIC LAYER DEPOSITION; ZNO; PHASES;

D O I：

10.1149/1.3205045

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We investigated the structural and mechanical properties of 400 nm and 40 nm thick ALD ZnO thin films. Diethyl zinc was used as the precursor for zinc and water vapor was used as the oxygen source. The samples were deposited at 150 degrees C and at a pressure of 2.1x10(-1) Torr. A growth rate of 2 angstrom per cycles was calculated in the ALD process window. The Nanoindenter XP from MTS was used in conjunction with the continuous stiffness measurement (CSM) in depth control mode to analyze the elasto-mechanical properties of ALD ZnO thin films samples. For comparison we benchmarked the mechanical properties of single crystal bulk ZnO samples against our ALD ZnO thin films. We measured the modulus and hardness values of 125 +/- 1.6GPa and 5.6 +/- 0.09GPa respectively for our single crystal bulk ZnO reference sample.

引用

页码：85 / 92

页数：8

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