CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON.

Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at E//v plus 0. 39 ev acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0. 07 mu sec, and resistivity-lifetime products, rho tau equals 0. 1 OMEGA cm multiplied by (times) mu sec, have been achieved.