CONTACTLESS MEASUREMENT OF SHORT CARRIER LIFETIME IN HEAT-TREATED N-TYPE SILICON.

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作者：
Yamazaki, Tatsuya
Ogita, Yoh-ichiro
Ikegami, Yoshikazu
Onaka, Hiroshi
Ohta, Eiji
Sakata, Makoto
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来源：
| 1600年 / 23期
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中图分类号：
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号：
0805 ; 080502 ; 080801 ; 0809 ;
摘要：
Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at E//v plus 0. 39 ev acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0. 07 mu sec, and resistivity-lifetime products, rho tau equals 0. 1 OMEGA cm multiplied by (times) mu sec, have been achieved.
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