Improvement of crystalline quality in GaN films by air-bridged lateral epitaxial growth

被引：0

作者：

Kidoguchi, Isao ^{[1
]}

Ishibashi, Akihiko ^{[1
]}

Sugahara, Gaku ^{[1
]}

Tsujimura, Ayumu ^{[1
]}

Ban, Yuzaburoh ^{[1
]}

机构：

[1] Matsushita Electric Industrial Co, Ltd, Osaka, Japan

来源：

| 1600年 / JJAP, Tokyo卷 / 39期

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