Improvement of crystalline quality in GaN films by air-bridged lateral epitaxial growth

被引:0
|
作者
Kidoguchi, Isao [1 ]
Ishibashi, Akihiko [1 ]
Sugahara, Gaku [1 ]
Tsujimura, Ayumu [1 ]
Ban, Yuzaburoh [1 ]
机构
[1] Matsushita Electric Industrial Co, Ltd, Osaka, Japan
来源
| 1600年 / JJAP, Tokyo卷 / 39期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Improvement of crystalline quality in GaN films by air-bridged lateral epitaxial growth
    Kidoguchi, I
    Ishibashi, A
    Sugahara, G
    Tsujimura, A
    Ban, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (5B): : L453 - L456
  • [2] High-quality GaN films obtained by air-bridged lateral epitaxial growth
    Ishibashi, A
    Kidoguchi, I
    Sugahara, G
    Ban, Y
    JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) : 338 - 344
  • [3] Air-bridged lateral epitaxial overgrowth of GaN thin films
    Kidoguchi, I
    Ishibashi, A
    Sugahara, G
    Ban, Y
    APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3768 - 3770
  • [4] FEM deformation analysis of Air-Bridged Lateral Epitaxial grown GaN films
    Ishibashi, A
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 755 - 760
  • [5] Study on deformations and stress distributions in air-bridged lateral-epitaxial-grown GaN films
    Ishibashi, A
    Sugahara, G
    Kawaguchi, Y
    Yokogawa, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (10B): : L1248 - L1251
  • [6] Recombination dynamics in GaN and InGaN/GaN multiple quantum wells on air-bridged lateral epitaxial grown GaN layers
    Izumi, T
    Inoue, K
    Narukawa, Y
    Okamoto, K
    Kawakami, Y
    Fujita, S
    Tsujimura, A
    Kidoguchi, I
    Ban, Y
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 599 - 602
  • [7] Low-dislocation density AlGaN layer by air-bridged lateral epitaxial growth
    Kawaguchi, Y
    Sugahara, G
    Mochida, A
    Shimamoto, T
    Ishibashi, A
    Yokogawa, T
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2107 - 2110
  • [8] Optical properties of InGaN based multiple quantum wells on low threading dislocation density GaN films fabricated by air-bridged lateral epitaxial growth
    Ishibashi, A
    Sugahara, G
    Kawaguchi, Y
    Yamada, Y
    Taguchi, T
    Yokogawa, T
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2116 - 2119
  • [9] Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air-bridged lateral epitaxial growth
    Ishibashi, A
    Kawaguchi, Y
    Sugahara, G
    Shimamoto, T
    Yokogawa, T
    Yamada, Y
    Ueki, Y
    Nakamura, K
    Taguchi, T
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (12): : 2730 - 2734
  • [10] Reduction of leakage current of p-n junction by using air-bridged lateral epitaxial growth technique
    Yamada, A
    Kawaguchi, Y
    Yokogawa, T
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2494 - 2497