共 50 条
- [1] Improvement of crystalline quality in GaN films by air-bridged lateral epitaxial growth JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (5B): : L453 - L456
- [4] FEM deformation analysis of Air-Bridged Lateral Epitaxial grown GaN films COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 755 - 760
- [5] Study on deformations and stress distributions in air-bridged lateral-epitaxial-grown GaN films JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (10B): : L1248 - L1251
- [6] Recombination dynamics in GaN and InGaN/GaN multiple quantum wells on air-bridged lateral epitaxial grown GaN layers PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 599 - 602
- [7] Low-dislocation density AlGaN layer by air-bridged lateral epitaxial growth 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2107 - 2110
- [8] Optical properties of InGaN based multiple quantum wells on low threading dislocation density GaN films fabricated by air-bridged lateral epitaxial growth 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2116 - 2119
- [9] Spatially resolved cathodoluminescence study on AlGaN layer fabricated by air-bridged lateral epitaxial growth PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2004, 241 (12): : 2730 - 2734
- [10] Reduction of leakage current of p-n junction by using air-bridged lateral epitaxial growth technique 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2494 - 2497