High-deposition-rate growth of lead titanate zirconate films by reactive electron beam coevaporation

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[1] Mochizuki, Shoichi
[2] Mihara, Toshiyuki
[3] Ishida, Tadashi
来源：
Mochizuki, Shoichi | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
关键词：
Annealing - Electron beams - Evaporation - Ferroelectric materials - Ozone - Perovskite - Phase transitions - Semiconducting lead compounds - Semiconductor growth - Titanate minerals - Vapor deposition - Zirconium compounds;
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摘要：
Lead titanate zirconate (PZT) thin films were prepared by reactive coevaporation of lead, zirconium and titanium with an electron beam gun. To promote oxygenation of deposited films, mixed gas of oxygen and ozone was used. A PZT film with a single perovskite phase was obtained at a substrate temperature of 550 °C without post-thermal annealing on a lead titanate film. The deposition rate was 50 nm/min, which was much higher than that in the case of the sputtering method. The axial ratio (c/a) of the tetragonal perovskite phase decreased with the increase of zirconium content.
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