Thermal redistribution of Al implanted in Si: evidences for interactions with extended defects

被引:0
|
作者
Ortiz, Ch. [1 ]
Grob, J.J. [1 ]
Mathiot, D. [1 ]
Claverie, A. [1 ]
Dubois, Ch. [1 ]
Jerisian, R. [1 ]
机构
[1] Lab PHASE-CNRS, Strasbourg, France
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:122 / 126
相关论文
共 50 条
  • [31] Redistribution of nitrogen implanted into iron: Role of carbon and radiation defects
    Moncoffre, N.
    Jagielski, J.
    Surface and Coatings Technology, 1994, 65 (1 -3 pt 1) : 30 - 36
  • [32] RADIATION-INDUCED REDISTRIBUTION OF IMPLANTED IONS IN SEMICONDUCTORS WITH DEFECTS
    KORNEEVA, LA
    MAZUR, EA
    RUDENKO, AI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (11): : 1266 - 1269
  • [33] RESIDUAL DEFECTS IN HIGH-ENERGY B-IMPLANTED, P-IMPLANTED AND AS-IMPLANTED SI BY RAPID THERMAL ANNEALING
    TAMURA, M
    OHYU, K
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (02): : 149 - 155
  • [34] Radiation-induced redistribution of implanted impurities in Al
    Kothari, DC
    Kulkarni, VN
    Miotello, A
    Guzman, L
    Linker, G
    Strehlau, B
    SURFACE & COATINGS TECHNOLOGY, 1996, 83 (1-3): : 88 - 92
  • [35] THERMAL REDISTRIBUTION OF OXYGEN DURING SOLID-PHASE REGROWTH OF ARSENIC-IMPLANTED AMORPHIZED SI
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    ORMOND, R
    FURMAN, BK
    EVANS, CA
    DAY, DS
    APPLIED PHYSICS LETTERS, 1981, 39 (05) : 413 - 415
  • [36] RECOIL OXYGEN IMPLANTS AND THERMAL REDISTRIBUTION OF OXYGEN IN THROUGH-OXIDE ARSENIC-IMPLANTED SI
    MAGEE, TJ
    LEUNG, C
    KAWAYOSHI, H
    PALKUTI, LJ
    FURMAN, BK
    EVANS, CA
    CHRISTEL, LA
    GIBBONS, JF
    DAY, DS
    APPLIED PHYSICS LETTERS, 1981, 39 (07) : 564 - 566
  • [37] DEFECTS IN MEV SI-IMPLANTED SI PROBED WITH POSITRONS
    NIELSEN, B
    HOLLAND, OW
    LEUNG, TC
    LYNN, KG
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 1636 - 1639
  • [38] Interstitial defects in ion-implanted Si
    Kovacevic, I
    Borjanovic, V
    Pivac, B
    VACUUM, 2003, 71 (1-2) : 129 - 133
  • [39] ANNEALING OF DEFECTS ASSOCIATED WITH EU IMPLANTED IN SI
    BHAGAWAT, A
    KURUP, MB
    PRASAD, KG
    SHARMA, RP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 33 (1-4): : 719 - 723
  • [40] Evolution of secondary defects in arsenic implanted Si
    Zhu, He
    Wang, Miao
    Zhang, Bingpo
    Wu, Huizhen
    Sun, Yan
    Hu, Gujin
    Dai, Ning
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)