METAL-InSb SURFACE BARRIERS.

Metal-semiconductor surface barriers were formed by vacuum evaporation of Au, Ag and Al on n-type InSb. Their current and capacitance curves were measured as a function of voltage at 77 K and analyzed in terms of existing theory. On CP-4A and H-100 etched n-type InSb inversion layer barriers were formed while CP-4A and 10** minus **5 M Na//2S jet-rinse treatment resulted in the formation of Schottky-type barriers. Rectifying barriers did not form on p-type material.