METAL-InSb SURFACE BARRIERS.

被引：0
|
作者：
Korwin-Pawlowski, M.L.
Heasell, E.L.
机构：
来源：
| 1974年
关键词：
Semiconducting indium compounds;
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学科分类号：
摘要：
Metal-semiconductor surface barriers were formed by vacuum evaporation of Au, Ag and Al on n-type InSb. Their current and capacitance curves were measured as a function of voltage at 77 K and analyzed in terms of existing theory. On CP-4A and H-100 etched n-type InSb inversion layer barriers were formed while CP-4A and 10** minus **5 M Na//2S jet-rinse treatment resulted in the formation of Schottky-type barriers. Rectifying barriers did not form on p-type material.
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页码：255 / 262
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