Impact of Flash Lamp Annealing on 20-nm-Gate-Length Metal Oxide Silicon Field Effect Transistors

被引：0
|
作者：
Nishinohara, Kazumi T. [1 ]
Ito, Takayuki [1 ]
Itani, Takaharu [1 ]
Suguro, Kyoichi [1 ]
机构：
[1] Proc./Mfg. Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2003年 / 42卷 / 10 A期
关键词：
D O I：
10.1143/jjap.42.l1126
中图分类号：
学科分类号：
摘要：
MOSFET devices
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