Effect of gate-drain/source overlap on the noise in 90 nm N-channel metal oxide semiconductor field effect transistors

In this paper, we have studied the effect of gate-drain/source overlap (L-OV) on the drain channel noise and induced gate current noise (S-Ig) in 90 nm N-channel metal oxide semiconductor field effect transistors using process and device simulations. As the change in overlap affects the gate tunneling leakage current, its effect on shot noise component of S-Ig has been taken into consideration. It has been shown that "control over L-OV" allows us to get better noise performance from the device, i.e., it allows us to reduce noise figure, for a given leakage current constraint. L-OV in the range of 0-10 nm is recommended for the 90 nm gate length transistors, in order to get the best performance in radio frequency applications. (C) 2006 American Institute of Physics.