共 50 条
- [41] GROWTH AND CHARACTERIZATION OF GAN ON SAPPHIRE (0001) USING PLASMA-ASSISTED IONIZED SOURCE BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 796 - 799
- [44] Comparison of Si, Sapphire, SiC, and GaN Substrates for HEMT Epitaxy GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 2012, 50 (03): : 163 - 171
- [46] Cantilever epitaxy of GaN on sapphire: Further reductions in dislocation density GAN AND RELATED ALLOYS-2002, 2003, 743 : 15 - 20
- [48] Microstructure of GaN grown by lateral confined epitaxy 2. GaN on patterned sapphire Journal of Electronic Materials, 2003, 32 : 23 - 28