Plasma preconditioning of sapphire substrate for GaN epitaxy

被引：0
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作者：
Heinlein, Christian [1 ]
Grepstad, Jostein [1 ]
Riechert, Henning [1 ]
Averbeck, Robert [1 ]
机构：
[1] NTNU, Trondheim, Norway
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1997年 / B43卷 / 1-3期
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Number:; -; Acronym:; Sponsor: Norges Forskningsråd;
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页码：253 / 257
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