共 50 条
- [31] STUDY OF ELECTRICAL AND OPTICAL-PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH-DOSE CR+-IONS AND FE+-IONS EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 387 - 389
- [32] STRUCTURE AND OPTICAL-PROPERTIES OF SILICON IMPLANTED BY HIGH-DOSES OF 70 AND 310 KEV CARBON-IONS RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 7 - 12
- [33] Effect of swift high energy phosphorous ions on the optical and electrical properties of porous silicon NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 156 (1-4): : 100 - 104
- [34] NOISE OF THE 1/F TYPE AND ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GAAS BOMBARDED WITH HIGH-ENERGY IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (03): : 307 - 310
- [36] Structural, optical, and electrical characteristics of 70 Mev Si5+ ion irradiation-induced nanoclusters of gallium nitride Journal of Materials Science, 2011, 46 : 1015 - 1020
- [39] MONTE-CARLO SIMULATION OF CHANNELED AND RANDOM PROFILES OF HEAVY-IONS IMPLANTED IN SILICON AT HIGH-ENERGY (1.2 MEV) PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 102 (01): : K13 - K18