NOISE OF THE 1/F TYPE AND ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GAAS BOMBARDED WITH HIGH-ENERGY IONS

A study was made of the influence of irradiation with nitrogen ions of approximately 18 MeV energy on the properties of n-type GaAs. Such irradiation had been used earlier to form an effective saturable absorber layer near mirrors in GaAs/GaAlAs lasers. A study was made of the dose dependences of the resistance, of the photoconductivity decay kinetics at a low excitation rate, and of the 1f noise. The results obtained were in conflict with an earlier hypothesis that ion irradiation created thin amorphized cylinders along the particle tracks. The results indicated that the main defect-formation mechanism in the dose range 10(10) less-than-or-equal-to PHI less-than-or-equal-to less-than-or-equal-to 10(12) cm-2 was generation of acceptor point defects.