Structural characterization of InGaAs/GaAs quantum dots superlattice infrared photodetector structures

被引：0
|
作者：
Zhuang, Q.D. [1 ]
Li, J.M. [1 ]
Zeng, Y.P. [1 ]
Pan, L. [1 ]
Li, H.X. [1 ]
Kong, M.Y. [1 ]
Lin, L.Y. [1 ]
机构：
[1] Novel Materials Center, Inst. Semiconductors, Chinese A., Beijing, China
来源：
Journal of Crystal Growth | 1999年 / 200卷 / 03期
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页码：375 / 381
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