Adsorption of atomic hydrogen on Ag-covered 6H-SiC(0001) surface

被引:0
|
作者
Fujino, Toshiaki [1 ]
Fuse, Takashi [1 ]
Ryu, Jeong-Tak [1 ]
Inudzuka, Katsuhiko [1 ]
Yamazaki, Yujin [1 ]
Katayama, Mitsuhiro [1 ]
Oura, Kenjiro [1 ]
机构
[1] Department of Electronic Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
关键词
Annealing - Crystal orientation - Crystalline materials - Gas adsorption - Hydrogen - Low energy electron diffraction - Silver - Spectroscopic analysis - Surface structure - Vacuum;
D O I
暂无
中图分类号
学科分类号
摘要
We have investigated atomic hydrogen (H) adsorption on an Ag-covered 6H-SiC(0001) surface, using coaxial impactcollision ion-scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA). It has been revealed that the two-dimensional (2D) layer of Ag on the 6H-SiC(0001) surface is changed to three-dimensional (3D) islands by the adsorption of H on the surface. The 3D Ag islands have an Ag(111) crystalline structure. When this surface is annealed at 550 °C, the 3D Ag islands do not revert to a 2D layer but desorb from the surface together with H.
引用
收藏
页码:4340 / 4342
相关论文
共 50 条
  • [21] Atomic structure of 6H-SiC(0001¯)-(2×2)C
    Lehrst. F. Festkörperphysik, Friedrich-Alexander Univ. E., Staudtstr. 7, DE-91058 Erlangen, Germany
    Materials Science Forum, 2000, 338
  • [22] Current patterning of 6H-SiC(0001) surface by AFM
    Mazur, P.
    Grodzicki, M.
    Zuber, S.
    Ciszewski, A.
    APPLIED SURFACE SCIENCE, 2008, 254 (14) : 4332 - 4335
  • [23] Electronic and atomic structure of the 6H-SiC(0001) surface studied by ARPES, LEED, and XPS
    Hollering, M
    Bernhardt, J
    Schardt, J
    Ziegler, A
    Graupner, R
    Mattern, B
    Stampfl, APJ
    Starke, U
    Heinz, K
    Ley, L
    PHYSICAL REVIEW B, 1998, 58 (08) : 4992 - 5000
  • [24] Graphitization of the 6H-SiC(0001) surface studied by HREELS
    Angot, T
    Portail, M
    Forbeaux, I
    Layet, JM
    SURFACE SCIENCE, 2002, 502 : 81 - 85
  • [25] THE (0001)-SURFACE OF 6H-SIC - MORPHOLOGY, COMPOSITION AND STRUCTURE
    STARKE, U
    BRAM, C
    STEINER, PR
    HARTNER, W
    HAMMER, L
    HEINZ, K
    MULLER, K
    APPLIED SURFACE SCIENCE, 1995, 89 (02) : 175 - 185
  • [26] Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen
    Losurdo, M
    Giangregorio, MM
    Capezzuto, P
    Bruno, G
    Brown, AS
    Kim, TH
    Yi, CH
    JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) : 457 - 465
  • [27] Comparison of the adsorption of thin zirconium and titanium oxides films on the 6H-SiC(0001) surface
    Idczak, K.
    Skiscim, M.
    Markowski, L.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2012, 47 (03) : 329 - 332
  • [28] Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen
    Maria Losurdo
    Maria M. Giangregorio
    Pio Capezzuto
    Giovanni Bruno
    April S. Brown
    Tong-Ho Kim
    Changhyun Yi
    Journal of Electronic Materials, 2005, 34 : 457 - 465
  • [29] Effect of surface polarity on gallium adsorption on 6H-SiC(0001) surfaces: An STM study
    Tindall, C
    Li, L
    Hasegawa, Y
    Sakurai, T
    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY, 1997, 44 (01): : 95 - 98
  • [30] Atomistic investigation of various GaN (0001) phases on the 6H-SiC (0001) surface
    Xue, Q
    Xue, QK
    Bakhtizin, RZ
    Hasegawa, Y
    Tsong, IST
    Sakurai, T
    Ohno, T
    PHYSICAL REVIEW B, 1999, 59 (19): : 12604 - 12611