BASIC PRINCIPLES OF PLASMA ETCHING FOR SILICON DEVICES.

被引：0

作者：

Flamm, Daniel L. ^{[1
]}

Donnelly, Vincent M. ^{[1
]}

Ibbotson, Dale E. ^{[1
]}

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

VLSI Electronics, Microstructure Science | 1984年 / 8卷

关键词：

PLASMA DEVICES - Applications - SEMICONDUCTING SILICON - Etching;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Low-pressure plasma discharges are in wide use for etching micrometer-size features in microelectronic integrated circuits and discrete devices. Plasma etching has largely replaced wet etching because of its finer linewidth resolution and adaptability to increased throughput and automation. We discuss the characterization of plasma etching for silicon technology and show how recent theory and experimental findings can be used to select etchants for specific applications.

引用

页码：189 / 251

共 50 条

[31] PLASMA-ETCHING OF SILICON AND SILICON-OXIDES
FLAMM, DL
SILICON CHEMISTRY, 1988, : 391 - 403
[32] OPTOCOUPLING DEVICES.
Dance, Brian
New Electronics, 1979, 12 (18): : 38 - 52
[33] OPTOELECTRONIC DEVICES.
Huffman, George
EDN, 1980, 25 (19) : 92 - 101
[34] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING
FLAMM, DL
DONNELLY, VM
IBBOTSON, DE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01): : 23 - 30
[35] BASIC CHEMISTRY AND MECHANISMS OF PLASMA ETCHING.
Flamm, Daniel L.
Donnelly, Vincent M.
Ibbotson, Dale E.
Semiconductor International, 1983, (04) : 136 - 143
[36] Technical devices.
Minne, HW
JOURNAL OF BONE AND MINERAL RESEARCH, 1999, 14 : S555 - S555
[37] Molecular devices.
Datta, S
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 226 : U389 - U389
[38] POWER DEVICES.
Anon
Electronic Engineering (London), 1987, 59 (727): : 48 - 68
[39] FORMATION MECHANISMS OF LABORATORY DOUBLE LAYERS IN TRIPLE PLASMA DEVICES.
Chan, Chung
1600, (05):
[40] CHARGE COUPLED DEVICES - BASIC OPERATION AND PRINCIPLES
ARORA, RK
MICROELECTRONICS AND RELIABILITY, 1976, 15 (05): : 475 - 483

← 1 2 3 4 5 →