BASIC PRINCIPLES OF PLASMA ETCHING FOR SILICON DEVICES.

被引：0

作者：

Flamm, Daniel L. ^{[1
]}

Donnelly, Vincent M. ^{[1
]}

Ibbotson, Dale E. ^{[1
]}

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

VLSI Electronics, Microstructure Science | 1984年 / 8卷

关键词：

PLASMA DEVICES - Applications - SEMICONDUCTING SILICON - Etching;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Low-pressure plasma discharges are in wide use for etching micrometer-size features in microelectronic integrated circuits and discrete devices. Plasma etching has largely replaced wet etching because of its finer linewidth resolution and adaptability to increased throughput and automation. We discuss the characterization of plasma etching for silicon technology and show how recent theory and experimental findings can be used to select etchants for specific applications.

引用

页码：189 / 251

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