Low-temperature metalorganic chemical vapor deposition of GaAs on Si by alternate gas flow of the source materials

被引：0

作者：

机构：

[1] Fujita, Kazuhisa

[2] Kanao, Hiroto

[3] Matsuda, Yasushi

来源：

Fujita, Kazuhisa | 1600年 / 31期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[1] LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS ON SI BY ALTERNATE GAS-FLOW OF THE SOURCE MATERIALS
FUJITA, K
KANAO, H
MATSUDA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (2A): : 225 - 226
[2] LOW-TEMPERATURE EPITAXY OF GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
CHEN, WK
CHANG, CS
CHEN, WC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A): : L1052 - L1055
[3] LOW-TEMPERATURE METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INP ON SI(001)
GRUNDMANN, M
KROST, A
BIMBERG, D
APPLIED PHYSICS LETTERS, 1991, 58 (03) : 284 - 286
[4] Low-temperature GaAs metalorganic chemical vapor deposition using dimethylamine gallane and arsine
Yamauchi, Yoshiharu, 1600, (32):
[5] New approach to low-temperature epitaxial growth of GaAs by photostimulated metalorganic chemical vapor deposition
Kachi, Tetsu
Ito, Hiroshi
Terada, Shigeo
Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 (08):
[6] Structure of high resistivity GaAs film grown by low-temperature metalorganic chemical vapor deposition
Chen, WC
Chang, CS
Chan, SH
APPLIED PHYSICS LETTERS, 1996, 69 (21) : 3239 - 3241
[7] LOW-TEMPERATURE GAAS METALORGANIC CHEMICAL VAPOR-DEPOSITION USING DIMETHYLAMINE GALLANE AND ARSINE
YAMAUCHI, Y
KOBAYASHI, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (2A): : L160 - L163
[8] METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION GROWTH OF GAAS ON SI USING GAAS BUFFER LAYER GROWN BY AN ALTERNATE GAS-FLOW OF SOURCE MATERIALS
FUJITA, K
KANAO, H
SHIBA, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04): : 633 - 634
[9] Low-temperature growth of ZnS by photoassisted metalorganic chemical vapor deposition
Fujita, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (7B): : L919 - L922
[10] LOW-TEMPERATURE GROWTH OF HIGH-RESISTIVITY GAAS BY PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION
ROBERTS, JC
BOUTROS, KS
BEDAIR, SM
LOOK, DC
APPLIED PHYSICS LETTERS, 1994, 64 (18) : 2397 - 2399

← 1 2 3 4 5 →