Be delta-doped layers in GaAs studied by scanning tunnelling microscopy

被引：0
|
作者：
Eindhoven Univ of Technology, Eindhoven, Netherlands [1 ]
机构：
来源：
Mater Sci Eng B Solid State Adv Technol | / 1-3卷 / 485-488期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
10
引用
收藏
相关论文
共 50 条
  • [41] MIGRATION OF SI IN DELTA-DOPED MBE GAAS
    BEALL, RB
    HARRIS, JJ
    CLEGG, JB
    GOWERS, JP
    JOYCE, BA
    CASTAGNE, J
    WELCH, V
    [J]. GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 17 - 22
  • [42] Electrochemical capacitance-voltage measurements and modeling of GaAs nanostructures with delta-doped layers
    Shestakova, L.
    Yakovlev, G.
    Zubkov, V.
    [J]. 18TH RUSSIAN YOUTH CONFERENCE ON PHYSICS OF SEMICONDUCTORS AND NANOSTRUCTURES, OPTO- AND NANOELECTRONICS, 2017, 816
  • [43] ELECTRONIC-PROPERTIES OF DELTA-DOPED GAAS
    GOLD, A
    GHAZALI, A
    SERRE, J
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (07) : 972 - 979
  • [44] INTERBAND-TRANSITIONS OF SI DELTA-DOPED LAYERS IN PARA-TYPE GAAS
    SCOLFARO, LMR
    MENDONCA, CAC
    MENEZES, EA
    MARTINS, JMV
    LEITE, JR
    [J]. INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY, 1990, : 447 - 453
  • [45] Characterization of delta-doped GaAs grown by MOVPE
    Gurnik, P
    Beno, P
    Srnánek, R
    Tlaczala, M
    Sciana, B
    Harmatha, L
    [J]. ASDAM '02, CONFERENCE PROCEEDINGS, 2002, : 157 - 160
  • [46] Electrical transport properties of GaAs structures with a pair of Be and donor impurity delta-doped layers
    Idutsu, Y
    Shimogishi, F
    Noh, JP
    Otsuka, N
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (01): : 157 - 162
  • [47] EFFECTS OF AS FLUX ON SI DELTA-DOPED GAAS
    SHIH, YCA
    NEIKIRK, DP
    STREETMAN, BG
    MAGEE, CW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 905 - 907
  • [48] Quantum transport in periodically delta-doped GaAs
    Henriques, AB
    Goncalves, LCD
    Oliveira, NF
    Shibli, SM
    Souza, PL
    Yavich, B
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1997, 104 (03): : 457 - 461
  • [49] ELECTROOPTICAL MEASUREMENT OF HIGH-FIELD CONDUCTIVITY IN DELTA-DOPED GAAS EPITAXIAL LAYERS
    BALYNAS, Y
    KROTKUS, A
    LIDEIKIS, T
    STALNIONIS, A
    TREIDERIS, G
    [J]. ELECTRONICS LETTERS, 1991, 27 (01) : 2 - 3
  • [50] Lattice locations of silicon atoms in delta-doped layers in GaAs at high doping concentrations
    Newman, RC
    Ashwin, MJ
    Fahy, MR
    Hart, L
    Holmes, SN
    Roberts, C
    Zhang, X
    Wagner, J
    [J]. PHYSICAL REVIEW B, 1996, 54 (12) : 8769 - 8781
12345